Medium-voltage (MV) power electronic converters have been extensively investigated and utilized in a wide variety of applications, such as electric grid interface in highly populated urban areas [1, 2], electric ship dc systems [3], propulsion motor drives [4], railway traction [5], and renewable energy integration [6, 7]. Among one of the most interesting topologies recently developed, the modular multilevel converter (MMC) has increasingly been considered due to features of modularity, scalability, resiliency, transformer-less operation, and high-power quality. Simultaneously, due to often limited and expensive land and space, a trend toward high-density converters has evolved too. For MV converters, 10 kV SiC MOSFETs have emerged with this capability, having the potential to substitute 3.2, 4.5, and 6.5 kV Si IGBT counterparts [8], offering in addition highly sought system benefits, such as high efficiency, high switching frequency, and hence their high density, topology simplification, and high control bandwidth.

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Design and Evaluation of a 24 kV, 2 MW, High-Density, High Efficiency, Modular Medium-Voltage Power Converter Based on 10 kV SiC MOSFET Devices

  • Slavko Mocevic,
  • Jianghui Yu,
  • Boran Fan,
  • Dong Dong,
  • Rolando Burgos,
  • Dushan Boroyevich

摘要

Medium-voltage (MV) power electronic converters have been extensively investigated and utilized in a wide variety of applications, such as electric grid interface in highly populated urban areas [1, 2], electric ship dc systems [3], propulsion motor drives [4], railway traction [5], and renewable energy integration [6, 7]. Among one of the most interesting topologies recently developed, the modular multilevel converter (MMC) has increasingly been considered due to features of modularity, scalability, resiliency, transformer-less operation, and high-power quality. Simultaneously, due to often limited and expensive land and space, a trend toward high-density converters has evolved too. For MV converters, 10 kV SiC MOSFETs have emerged with this capability, having the potential to substitute 3.2, 4.5, and 6.5 kV Si IGBT counterparts [8], offering in addition highly sought system benefits, such as high efficiency, high switching frequency, and hence their high density, topology simplification, and high control bandwidth.