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Wide Bandgap (WBG) semiconductor devices, in particular silicon carbide (SiC), are enabling pulsed power applications to be realized where traditional pulsed power switching devices (spark-gaps, thyratrons, etc.) cannot be implemented. SiC devices also enable operation beyond the limits of state-of-the-art silicon (Si) power electronic devices, especially at higher temperatures.

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Pulsed Power Techniques Enabled by SiC Devices for Subsurface Applications

  • 章节

  • 发表日期：

    2025年

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  • Steven G. E. Pronko,
  • David E. Sanabria Diaz,
  • William Moeny

摘要

Wide Bandgap (WBG) semiconductor devices, in particular silicon carbide (SiC), are enabling pulsed power applications to be realized where traditional pulsed power switching devices (spark-gaps, thyratrons, etc.) cannot be implemented. SiC devices also enable operation beyond the limits of state-of-the-art silicon (Si) power electronic devices, especially at higher temperatures.