The past couple of decades have seen a remarkable growth in the sales of vehicles, incorporating a hybrid or a fully electrified power train. Currently, due to limited battery capacities the electric vehicle (EV) users face the challenge of short driving ranges. This challenge is aggravated by the limited power outputs of present-day car chargers which prolongs the charging times from tens of minutes to hours. To alleviate this issue, this chapter proposes the design of a high-frequency (1 MHz) ultrafast electric vehicle charger (1 MW) which is intended to reduce the charging time to sub-10 minute interval and thereby provide a charging experience similar to conventional internal combustion engine-based vehicles. The proposed converter topology is based on an interleaved three-level active neutral point clamped converter utilizing Silicon Carbide (SiC) MOSFET modules. The SiC MOSFETs provide simultaneous benefits of high switching frequency operation (thereby reducing the footprint of system magnetics) and minimize the conduction/switching losses to achieve a high system efficiency.

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Ultrafast Electric Vehicle Charger

  • Nathan D. Weise,
  • Waqar A. Khan

摘要

The past couple of decades have seen a remarkable growth in the sales of vehicles, incorporating a hybrid or a fully electrified power train. Currently, due to limited battery capacities the electric vehicle (EV) users face the challenge of short driving ranges. This challenge is aggravated by the limited power outputs of present-day car chargers which prolongs the charging times from tens of minutes to hours. To alleviate this issue, this chapter proposes the design of a high-frequency (1 MHz) ultrafast electric vehicle charger (1 MW) which is intended to reduce the charging time to sub-10 minute interval and thereby provide a charging experience similar to conventional internal combustion engine-based vehicles. The proposed converter topology is based on an interleaved three-level active neutral point clamped converter utilizing Silicon Carbide (SiC) MOSFET modules. The SiC MOSFETs provide simultaneous benefits of high switching frequency operation (thereby reducing the footprint of system magnetics) and minimize the conduction/switching losses to achieve a high system efficiency.