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The group of IIIA–VIA monolayers with the metals M = B, Al, Ga, In, and Tl and the chalcogens X = O, S, Se, Te, and Po contains 25 binary combinations; however, these compounds have not all received the same attention. The best studied hexagonal 2H and 1T structures consist of four covalently bonded sublayers arranged in the form of X–M–M–X with polarized bonds owing to the different electronegativitiesElectronegativities of the constituents. Many of these compounds are energetically, dynamically, thermally, and mechanically stable. Most materials are indirect semiconductors with wide band gaps in the VIS-UV range offering the possibility of band gap tuning by strain, an external electric field, or by changing the number of layers in a few-layer sheet. The remarkable properties of these 2D materials include superior optical performance, promising photoelectrochemical performance, and topological and quantum features. Some of the compounds have attracted particular attention as potential thermoelectric materials owing to their moderate band gap of ~ 2 eV and large electrical conductivity, which are based on their unique density of states (DOS)Density Of States (DOS). Estimates of the power factor and figure of meritFigure of merit (ZT) employing Boltzmann transport theory and first-principles calculations suggest GaS, GaSe, and InSe monolayers as promising good candidates for thermoelectric applications. PhotocatalysisPhotocatalysis is another important field of potential applications. One reason for their use in water splittingWater splitting is the optimal band gap required for efficient absorption in the visible spectrum. Moreover, band gap engineering allows the realization of the band edge positions necessary to straddle the oxidation potential of H2O and the reduction potential of H2. Furthermore, the carrier mobilities are high, and the photogenerated electrons and holes tend to separate spatially in heterostructures with type-II band alignment, where the valence and conduction bands belong to different monolayers.

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Group IIIA–VIA Monolayers

  • 章节

  • 发表日期：

    2025年

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  • Peter Hess

摘要

The group of IIIA–VIA monolayers with the metals M = B, Al, Ga, In, and Tl and the chalcogens X = O, S, Se, Te, and Po contains 25 binary combinations; however, these compounds have not all received the same attention. The best studied hexagonal 2H and 1T structures consist of four covalently bonded sublayers arranged in the form of X–M–M–X with polarized bonds owing to the different electronegativitiesElectronegativities of the constituents. Many of these compounds are energetically, dynamically, thermally, and mechanically stable. Most materials are indirect semiconductors with wide band gaps in the VIS-UV range offering the possibility of band gap tuning by strain, an external electric field, or by changing the number of layers in a few-layer sheet. The remarkable properties of these 2D materials include superior optical performance, promising photoelectrochemical performance, and topological and quantum features. Some of the compounds have attracted particular attention as potential thermoelectric materials owing to their moderate band gap of ~ 2 eV and large electrical conductivity, which are based on their unique density of states (DOS)Density Of States (DOS). Estimates of the power factor and figure of meritFigure of merit (ZT) employing Boltzmann transport theory and first-principles calculations suggest GaS, GaSe, and InSe monolayers as promising good candidates for thermoelectric applications. PhotocatalysisPhotocatalysis is another important field of potential applications. One reason for their use in water splittingWater splitting is the optimal band gap required for efficient absorption in the visible spectrum. Moreover, band gap engineering allows the realization of the band edge positions necessary to straddle the oxidation potential of H2O and the reduction potential of H2. Furthermore, the carrier mobilities are high, and the photogenerated electrons and holes tend to separate spatially in heterostructures with type-II band alignment, where the valence and conduction bands belong to different monolayers.