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III-V semiconductor compound-based W-shaped type-II GaP/GaP0.5Sb0.5/GaAs0.16Sb0.84 nanoscale heterostructure is investigated under different well widths at 300 K. The optical gain is reported in GaP/GaPSb/GaAsSb type-II QW heterostructure with variable well widths of 2–5 nm. The 2 nm well width corresponds to the highest optical gain of 11,371 cm−1. On GaAs substrate, the complete heterostructure is intended to grow. The 6 × 6 Luttinger-Kohn model is employed to compute wavefunction, matrix elements and optical gain. The maximum shift in optical gain is a function of different well widths of GaP0.5Sb0.5 quantum well material. As the well width decreases, the optical gain of the heterostructure is observed to progressively increase. The suggested heterostructure exhibits linear behaviour, making it a highly appropriate heterostructure for optoelectronics device designs that function in the infrared region in the energy range of 0.929–0.843 eV (1.3–1.4 μm).

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Effect of Quantum Well Width on Optical Gain in Type-II GAP/GAPSB/GAASSB Nanoscale Heterostructure for IR Optoelectronics

  • 会议论文

  • 发表日期：

    2025年

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  • Priya Chaudhary,
  • Amit Rathi

摘要

III-V semiconductor compound-based W-shaped type-II GaP/GaP0.5Sb0.5/GaAs0.16Sb0.84 nanoscale heterostructure is investigated under different well widths at 300 K. The optical gain is reported in GaP/GaPSb/GaAsSb type-II QW heterostructure with variable well widths of 2–5 nm. The 2 nm well width corresponds to the highest optical gain of 11,371 cm−1. On GaAs substrate, the complete heterostructure is intended to grow. The 6 × 6 Luttinger-Kohn model is employed to compute wavefunction, matrix elements and optical gain. The maximum shift in optical gain is a function of different well widths of GaP0.5Sb0.5 quantum well material. As the well width decreases, the optical gain of the heterostructure is observed to progressively increase. The suggested heterostructure exhibits linear behaviour, making it a highly appropriate heterostructure for optoelectronics device designs that function in the infrared region in the energy range of 0.929–0.843 eV (1.3–1.4 μm).