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A vertical 4H-SiC p-i-n diode fabricated by Aluminum implantation is characterized in the cryogenic temperature range, i.e. lower than 123K. An anomalous characteristic is shown under current bias conditions and it can limit its use in fields of applications, like temperature sensing. To investigate the thermo-electrical behaviour, Deep Level Transient Spectroscopy (DLTS) analysis has been performed and an electron trap at 97 meV below the minimum edge of the conduction band with a capture cross section of \(1.14\cdot 10^{-13}\)  cm \({^2}\) and a hole trap at 375 meV from valence band with a capture cross section of \(4.4\cdot 10^{-13}\)  cm \({^2}\) have been found. We suppose that the anomalous behaviour of the I-V characteristics can be ascribed to the hole traps.

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Anomalous I-V Characteristics of 4H-SiC p-i-n Diode at Cryogenic Temperature

  • 会议论文

  • 发表日期：

    2025年

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  • Nicola Rinaldi,
  • Luigi Di Benedetto,
  • Gian Domenico Licciardo,
  • Rosalba Liguori,
  • Alfredo Rubino

摘要

A vertical 4H-SiC p-i-n diode fabricated by Aluminum implantation is characterized in the cryogenic temperature range, i.e. lower than 123K. An anomalous characteristic is shown under current bias conditions and it can limit its use in fields of applications, like temperature sensing. To investigate the thermo-electrical behaviour, Deep Level Transient Spectroscopy (DLTS) analysis has been performed and an electron trap at 97 meV below the minimum edge of the conduction band with a capture cross section of \(1.14\cdot 10^{-13}\)  cm \({^2}\) and a hole trap at 375 meV from valence band with a capture cross section of \(4.4\cdot 10^{-13}\)  cm \({^2}\) have been found. We suppose that the anomalous behaviour of the I-V characteristics can be ascribed to the hole traps.