The majority of current VLSI (very-large-scale integration) circuits are manufactured in CMOS technologies. Familiar examples are memories (1 Gb, 4 Gb and 16 Gb), microprocessors and signal processors. A good fundamental treatment of basic MOS devices is therefore essential for an understanding of the design and manufacture of modern VLSI circuits. This chapter describes the operation and characteristics of MOS devices. The material requirements for their realisation are discussed, and equations that predict their behaviour are derived.

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Basic Principles

  • Harry Veendrick

摘要

The majority of current VLSI (very-large-scale integration) circuits are manufactured in CMOS technologies. Familiar examples are memories (1 Gb, 4 Gb and 16 Gb), microprocessors and signal processors. A good fundamental treatment of basic MOS devices is therefore essential for an understanding of the design and manufacture of modern VLSI circuits. This chapter describes the operation and characteristics of MOS devices. The material requirements for their realisation are discussed, and equations that predict their behaviour are derived.