Design of Thin-Film S-Band Frequency Multiplexers
摘要
The article proposes frequency multiplexers for application in high-speed broadband air-ground communication channels. In particular, they are intended for use in an innovative four-channel satellite amplifier based on semiconductor devices covered by patent of the Russian Federation no. 2791956 dated March 14, 2023. The objective of the study is to identify features of implementation of the thin-film elements of the amplifier based on Russian-produced VK-100 ceramic substrate, with limitations specific to the nodes and complex installation areas on board the carrier. Operational characteristics of the thin-film elements are ensured based on Russian reference literature and the authors’ previous studies. Necessary adjustments of thin-film topology fragments to specific parameters of Russian-produced substrates and existing Russian technologies of vacuum copper deposition were made in the 3D modeling system CST Studio Suite.