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Abstract <p>The dependences of the main technological parameters on the operating modes of the magnetron at direct current during sputtering of a target composition (MoSi<sub>2</sub>&#xa0;+&#xa0;20&#xa0;wt %&#xa0;SiC) have been studied, and the influence of some parameters and modes of the technological process on the surface resistance <i>R</i><sub><i>S</i></sub> of the films has been studied. The value of the integral emissivity in the IR region of the film spectrum was determined to be 0.8. Using SEM analysis, the morphology of the surface and transverse cleavage of films deposited on a Si substrate was studied, and the quasi-amorphism of deposited films was established. It has been determined that the deposited films can be used as a resistive emitting medium in a thin-film IR emitter.</p>

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The Influence of Technological Factors on the Surface Resistance of Films Obtained by Magnetron Sputtering of a Target Composition (MOSi2 + 20% SiC)

  • 期刊论文

  • 发表日期：

    2025年10月22日

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  • I. M. Romanov,
  • S. D. Latushkina,
  • A. R. Luchenok,
  • O. I. Posylkina

摘要

Abstract

The dependences of the main technological parameters on the operating modes of the magnetron at direct current during sputtering of a target composition (MoSi2 + 20 wt % SiC) have been studied, and the influence of some parameters and modes of the technological process on the surface resistance RS of the films has been studied. The value of the integral emissivity in the IR region of the film spectrum was determined to be 0.8. Using SEM analysis, the morphology of the surface and transverse cleavage of films deposited on a Si substrate was studied, and the quasi-amorphism of deposited films was established. It has been determined that the deposited films can be used as a resistive emitting medium in a thin-film IR emitter.