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Abstract <p>Using the method of magnetron sputtering from a multicomponent target manufactured by hot pressing of a powder mixture, thin films of a high-entropy CoCrFeNiTi<sub><i>x</i></sub> alloy on silicon substrates were first obtained. The microstructure and phase composition of these films have been studied. Resistive thin-film elements are made and their electrical resistance is measured at different temperatures. It is shown that the value of the electrical resistance of new resistive elements linearly depends on temperature with the negative temperature coefficient TCR = –4.66 × 10<sup>–5</sup> K<sup>–1</sup>.</p>

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Thin High Entropy CoCrFeNiTix Alloy Films for Resistive Elements of Microelectronics

  • 期刊论文

  • 发表日期：

    2025年5月1日

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  • M. V. Polyakov,
  • A. S. Rogachev,
  • D. Yu. Kovalev,
  • S. G. Vadchenko,
  • D. O. Moskovskikh,
  • F. V. Kiryukhantsev-Korneev,
  • L. S. Volkova,
  • A. P. Orlov

摘要

Abstract

Using the method of magnetron sputtering from a multicomponent target manufactured by hot pressing of a powder mixture, thin films of a high-entropy CoCrFeNiTix alloy on silicon substrates were first obtained. The microstructure and phase composition of these films have been studied. Resistive thin-film elements are made and their electrical resistance is measured at different temperatures. It is shown that the value of the electrical resistance of new resistive elements linearly depends on temperature with the negative temperature coefficient TCR = –4.66 × 10–5 K–1.