Scholarlink

Abstract <p>The study of the ferromagnetic properties of silicon diffusion-doped with manganese impurity atoms makes it possible to determine the magnetic properties of this material. Depending on the technology of obtaining such samples, manganese may be located predominantly in the nodes or interstices of the silicon crystal lattice. It has been established that observations of the ferromagnetic properties of silicon are mainly related to the concentration of holes and the exchange interaction of holes in silicon. The study showed that the <i>d</i>-shell of manganese atoms can be filled with electrons, which leads to the appearance of the magnetic property of silicon doped with manganese atoms. The obtained research results showed a possibility to obtain a magnetic material with ferro-magnetic properties based on silicon doped with manganese impurity atoms, which can be widely used in the creation of spintronic devices in magnetoelectronics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ferromagnetic Properties of Silicon Doped Manganese Atoms

  • 期刊论文

  • 发表日期：

    2025年2月1日

查看全文
  • N. F. Zikrillaev,
  • S. V. Koveshnikov,
  • Levent Trabzon,
  • G. Kh. Mavlonov,
  • B. K. Ismaylov,
  • T. B. Ismailov,
  • F. E. Urakova

摘要

Abstract

The study of the ferromagnetic properties of silicon diffusion-doped with manganese impurity atoms makes it possible to determine the magnetic properties of this material. Depending on the technology of obtaining such samples, manganese may be located predominantly in the nodes or interstices of the silicon crystal lattice. It has been established that observations of the ferromagnetic properties of silicon are mainly related to the concentration of holes and the exchange interaction of holes in silicon. The study showed that the d-shell of manganese atoms can be filled with electrons, which leads to the appearance of the magnetic property of silicon doped with manganese atoms. The obtained research results showed a possibility to obtain a magnetic material with ferro-magnetic properties based on silicon doped with manganese impurity atoms, which can be widely used in the creation of spintronic devices in magnetoelectronics.