Monte Carlo Simulation of the Effect of Various Types of Artificial Defects on the Critical Current of the HTS Tape
摘要
The dependences of the critical current of a sample on the magnetic field are calculated using the Monte Carlo method as part of a two-dimensional model of a layered high-temperature superconductor (HTSC). The calculations were performed in low fields, no more than 0.2 T. Two types of defects of different concentrations were taken into account in the calculation including strong defects with a radius equal to the coherence length ξ and a depth of 1.0 eV, and weak defects with a radius of 3ξ and a depth of 0.4 eV. It is shown that the contribution to the critical current from the two types of pinning centers is not generally additive. In special cases, additivity is fulfilled for a periodic lattice of pinning centers and for single values of the external field. This property holds at T = 4.2 K and T = 77 K. In the presence of a regular (rectangular) lattice of pinning centers, the additivity of the critical current is not satisfied either.