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Abstract <p>Numerical modeling tools are more and more valuable due to the availability of high processing power. This study consists of studying the modeling and simulation of a n-V<sub>2</sub>O<sub>5</sub> thin film solar cell connected to p-CdTe using the one dimensional PC1D simulation software in a personal computer. In this research, I investigate the impact of different CdTe absorber layer thickness and doping concentration 0.5 to 5 µm and 10<sup>14</sup> to 10<sup>20</sup> cm<sup>–3</sup>, without a back surface field (BSF) layer. A BSF layer was incorporated in the n-V<sub>2</sub>O<sub>5</sub>/p-CdTe heterojunction to improve solar cell performance. The influence of the thickness and doping concentration of the Back Surface Field layer (of 0.5–2 µm and 10<sup>14</sup>–10<sup>20</sup> cm<sup>–3</sup> respectively) was investigated. The highest efficiency of η = 19.7% with <i>J</i><sub><i>sc</i></sub> = 27.7 mA/cm<sup>2</sup>, <i>V</i><sub><i>oc</i></sub> = 0.807 V, and <i>FF</i> = 88.32% was achieved by the optimal doping concentration and thickness of the p-CdTe and p-ZnTe layers.</p>

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Predicting Improving the Performance of the n-V2O5/CdTe Thin Film Solar Cell by Adding a Back Surface Field Layer

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • Raed M. Humaidan,
  • Falah Mohammed Abed,
  • Ghaith Thaaer Fadhil Al-Doori,
  • Abdulsamee Fawzi AbdulAziz

摘要

Abstract

Numerical modeling tools are more and more valuable due to the availability of high processing power. This study consists of studying the modeling and simulation of a n-V2O5 thin film solar cell connected to p-CdTe using the one dimensional PC1D simulation software in a personal computer. In this research, I investigate the impact of different CdTe absorber layer thickness and doping concentration 0.5 to 5 µm and 1014 to 1020 cm–3, without a back surface field (BSF) layer. A BSF layer was incorporated in the n-V2O5/p-CdTe heterojunction to improve solar cell performance. The influence of the thickness and doping concentration of the Back Surface Field layer (of 0.5–2 µm and 1014–1020 cm–3 respectively) was investigated. The highest efficiency of η = 19.7% with Jsc = 27.7 mA/cm2, Voc = 0.807 V, and FF = 88.32% was achieved by the optimal doping concentration and thickness of the p-CdTe and p-ZnTe layers.