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Abstract <p>Based on in-situ photoluminescence measurements, we study the regimes of pulsed laser irradiation of diamond at low temperatures (77 K), at which a hot phonon spot is formed due to multiphoton absorption in the diamond matrix. It is shown that a hot phonon spot with a temperature of 300 K leads to quenching of the luminescence of SiV<sup>‒</sup> centers, maintaining the width of the emission line unchanged. It is found that at a temperature of 1000 K, caused by excitation with an energy density of about 0.5 J/cm<sup>2</sup>, a fragment is chipped off the diamond matrix, accompanied by broadening of the luminescence lines of SiV<sup>‒</sup> centers.</p>

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Role of a Hot Phonon Spot in Destructive Laser Irradiation of a Single-Crystal CVD Diamond Film

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • S. I. Chentsov,
  • A. I. Sharkov,
  • I. I. Usmanov

摘要

Abstract

Based on in-situ photoluminescence measurements, we study the regimes of pulsed laser irradiation of diamond at low temperatures (77 K), at which a hot phonon spot is formed due to multiphoton absorption in the diamond matrix. It is shown that a hot phonon spot with a temperature of 300 K leads to quenching of the luminescence of SiV‒ centers, maintaining the width of the emission line unchanged. It is found that at a temperature of 1000 K, caused by excitation with an energy density of about 0.5 J/cm2, a fragment is chipped off the diamond matrix, accompanied by broadening of the luminescence lines of SiV‒ centers.