Scholarlink

Abstract <p>Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky–Krastanov growth are studied. The&#xa0;possibility of lasing on the fundamental optical transition at record-high (134–153 cm<sup>–1</sup>) optical losses is demonstrated. The saturated modal gain is estimated to be 45 cm<sup>–1</sup> per quantum dot layer, which exceeds the values typical for conventional quantum-dot lasers by several times.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ultrahigh Modal Gain in Stripe Injection Lasers and Microlasers Based on InGaAs/GaAs Quantum Dots

  • 期刊论文

  • 发表日期：

    2025年5月31日

查看全文
  • F. I. Zubov,
  • Yu. M. Shernyakov,
  • N. Yu. Gordeev,
  • S. A. Mintairov,
  • N. A. Kalyuzhnyy,
  • M. V. Maximov,
  • N. V. Kryzhanovskaya,
  • E. I. Moiseev,
  • A. M. Nadtochiy,
  • A. E. Zhukov

摘要

Abstract

Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky–Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134–153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated to be 45 cm–1 per quantum dot layer, which exceeds the values typical for conventional quantum-dot lasers by several times.