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Abstract <p>Using computational modeling, we optimized the resistive heating process of the high-pressure apparatus (HPA) cell designed for the growth of GaN crystals from the Fe–Ga–N solution-melt under high-pressure and high-temperature (HPHT) conditions via the temperature gradient method. The thermal state of the apparatus was simulated by solving the coupled electro- and heat-conduction problem using the finite element method. Modeling determined the spatial distribution of temperature and temperature gradient within the experimental cell. As a result of computational optimization of the thermal state of the toroid-40 type HPA cell, polycrystalline GaN was synthesized from the Fe–Ga–N solution-melt. Reducing the axial temperature gradient in the crystallization volume from 13 to 1.5°C/mm produced the growth of petal-shaped GaN single crystals. Observed crystal growth rates varied from 40 to 250 µm/h.</p>

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High-Pressure High-Temperature Crystallization of GaN: Modeling and Experimental Studies

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • O. P. Liudvichenko,
  • O. O. Lyeshchuk,
  • I. A. Petrusha,
  • S. O. Gordieiev,
  • B. S. Sadovyi,
  • P. S. Sadovyi,
  • Yu. I. Sadova,
  • A. S. Nikolenko,
  • V. Z. Turkevych,
  • S. Porowski,
  • I. Grzegory

摘要

Abstract

Using computational modeling, we optimized the resistive heating process of the high-pressure apparatus (HPA) cell designed for the growth of GaN crystals from the Fe–Ga–N solution-melt under high-pressure and high-temperature (HPHT) conditions via the temperature gradient method. The thermal state of the apparatus was simulated by solving the coupled electro- and heat-conduction problem using the finite element method. Modeling determined the spatial distribution of temperature and temperature gradient within the experimental cell. As a result of computational optimization of the thermal state of the toroid-40 type HPA cell, polycrystalline GaN was synthesized from the Fe–Ga–N solution-melt. Reducing the axial temperature gradient in the crystallization volume from 13 to 1.5°C/mm produced the growth of petal-shaped GaN single crystals. Observed crystal growth rates varied from 40 to 250 µm/h.