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Abstract <p>Melting of new boron-rich chalcogenides, orthorhombic B<sub>6</sub>S and B<sub>6</sub>Se, has been studied at pressures up to 8 GPa using <i>in situ</i> electrical resistivity measurements. It was found that above 2.5&#xa0;GPa both chalcogenides melt congruently, and the melting curves have a negative slope (‒61(5)&#xa0;K/GPa for B<sub>6</sub>S and –80(2) K/GPa for B<sub>6</sub>Se), indicating a higher density of the melts compared to the solid phases. The melting points at ambient pressure were estimated to be 2190(30) K for B<sub>6</sub>S and 2347(12)&#xa0;K for B<sub>6</sub>Se.</p>

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On the Melting of Boron Chalcogenides B6S and B6Se under Pressure

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • V. L. Solozhenko

摘要

Abstract

Melting of new boron-rich chalcogenides, orthorhombic B6S and B6Se, has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements. It was found that above 2.5 GPa both chalcogenides melt congruently, and the melting curves have a negative slope (‒61(5) K/GPa for B6S and –80(2) K/GPa for B6Se), indicating a higher density of the melts compared to the solid phases. The melting points at ambient pressure were estimated to be 2190(30) K for B6S and 2347(12) K for B6Se.