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Abstract <p>The study of the mechanism of material removal and particle wear in the dispersive phase of a dispersive system during semiconductor material polishing revealed that the formation of slurry nanoparticles and polishing powder wear nanoparticles results from QD-FRET, a Förster resonance energy transfer mediated by quantum materials. The energy transferred between polishing powder particles and the treated surface, as well as the energy of slurry nanoparticles and polishing powder wear nanoparticles, depend parabolically on their most probable sizes, which are interrelated with the effective width of the quantum material’s bandgap. The material removal rate and the intensity of polishing powder wear decrease exponentially as the effective bandgap width increases on the corresponding surfaces. Their ratio, which characterizes the efficiency of using a dispersive system of micro- and nanopowders for semiconductor material polishing, increases linearly with a decrease in the treated surface area and the surface area of polishing powder particles. The results of theoretical calculations of the material removal rate agree well with experimental data on the polishing performance of InSb, SiC, and Ge crystals, with a deviation of 4–5%.</p>

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Polishing of Optotechnical Parts Made of Semiconductor Materials

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • Yu. D. Filatov,
  • A. Y. Boyarintsev,
  • O. V. Kolesnikov,
  • S. M. Galkin,
  • V. O. Novgorodtsev,
  • Ya. I. Polupan,
  • O. I. Pylypenko,
  • V. I. Sidorko,
  • S. V. Kovalev

摘要

Abstract

The study of the mechanism of material removal and particle wear in the dispersive phase of a dispersive system during semiconductor material polishing revealed that the formation of slurry nanoparticles and polishing powder wear nanoparticles results from QD-FRET, a Förster resonance energy transfer mediated by quantum materials. The energy transferred between polishing powder particles and the treated surface, as well as the energy of slurry nanoparticles and polishing powder wear nanoparticles, depend parabolically on their most probable sizes, which are interrelated with the effective width of the quantum material’s bandgap. The material removal rate and the intensity of polishing powder wear decrease exponentially as the effective bandgap width increases on the corresponding surfaces. Their ratio, which characterizes the efficiency of using a dispersive system of micro- and nanopowders for semiconductor material polishing, increases linearly with a decrease in the treated surface area and the surface area of polishing powder particles. The results of theoretical calculations of the material removal rate agree well with experimental data on the polishing performance of InSb, SiC, and Ge crystals, with a deviation of 4–5%.