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Abstract <p>Mg<sub>2</sub>Si was prepared via self-propagating high-temperature synthesis. Characterization by XRD and SEM confirmed Mg<sub>2</sub>Si as a basis. The synthesized product density, porosity, electrical resistivity, and Seebeck coefficient were measured. Electrical resistivity showed a nonlinear, semiconductor-like dependence. Similarly, the Seebeck coefficient followed a nonlinear trend, reaching a minimum of –367 µV/K at 589 K.</p>

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Self-Propagating High-Temperature Synthesis of Thermoelectric Mg2Si

  • 期刊论文

  • 发表日期：

    2026年3月1日

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  • A. E. Sytschev,
  • A. V. Karpov,
  • O. D. Boyarchenko,
  • A. O. Sivakova,
  • P. A. Lazarev

摘要

Abstract

Mg2Si was prepared via self-propagating high-temperature synthesis. Characterization by XRD and SEM confirmed Mg2Si as a basis. The synthesized product density, porosity, electrical resistivity, and Seebeck coefficient were measured. Electrical resistivity showed a nonlinear, semiconductor-like dependence. Similarly, the Seebeck coefficient followed a nonlinear trend, reaching a minimum of –367 µV/K at 589 K.