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Abstract <p>The thermoelectric alloy consisting of Al<sub>(1–x)</sub>MnSi<sub>(1+x)</sub> (Al<sub>2.5</sub>Mn<sub>3.0</sub>Si<sub>3.5</sub> and Al<sub>0.75</sub>Mn<sub>1.0</sub>Si<sub>1.25</sub>), Mn<sub>3</sub>Al, MnSi, and unreacted Si was prepared via self-propagating high-temperature synthesis. The microstructure of the alloy was shown to be porous and mainly represented by coarse Al<sub>(1–<i>x</i>)</sub>MnSi<sub>(1+<i>x</i>)</sub> grains (15–60 μm in size). Thermoelectric characteristics of synthesized material were studied. It was found that the Seebeck coefficient is –29 μV/K at room temperature and reaches –8 μV/K at 800 K. The maximum specific electrical resistance of 9.5 Ω cm was observed at room temperature.</p>

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Thermoelectric Properties of Al(1–x)MnSi(1+x) Alloy Prepared by Self-Propagating High-Temperature Synthesis

  • 期刊论文

  • 发表日期：

    2025年3月1日

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  • A. O. Sivakova,
  • A. V. Karpov,
  • P. A. Lazarev,
  • A. E. Sytschev

摘要

Abstract

The thermoelectric alloy consisting of Al(1–x)MnSi(1+x) (Al2.5Mn3.0Si3.5 and Al0.75Mn1.0Si1.25), Mn3Al, MnSi, and unreacted Si was prepared via self-propagating high-temperature synthesis. The microstructure of the alloy was shown to be porous and mainly represented by coarse Al(1–x)MnSi(1+x) grains (15–60 μm in size). Thermoelectric characteristics of synthesized material were studied. It was found that the Seebeck coefficient is –29 μV/K at room temperature and reaches –8 μV/K at 800 K. The maximum specific electrical resistance of 9.5 Ω cm was observed at room temperature.