Scholarlink

Abstract <p>The paper presents a comparison study results on the heterostructure between TiS<sub>3</sub> and Porous Silicon with pure Porous Silicon optoelectronic properties for photonics applications. To do this, titanium trisulfide, Porous Silicon and a heterostructure between them were synthesized and investigated. The TiS<sub>3</sub>/P–Si heterostructure-based photodetector demonstrated a significant performance enhancement over the pure P–Si device. Key results include an 8 to 10 fold increase in photoresponsivity (reaching up to ~190 A/W at 2 V bias, wavelength of 632.8 nm and 0.3 mW/cm<sup>2</sup> light power density), quantum efficiency (exceeding 37%), and detectivity (up to 2.26 × 10<sup>10</sup> Jones). Furthermore, the heterostructure exhibited a much faster response time of 0.015 s compared to 0.169 s for the pure P–Si device. The results demonstrate the relevance of using heterostructures for the development of new generation photodetectors.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impact of TiS3 Integration on Porous Silicon Photodetector Performance

  • 期刊论文

  • 发表日期：

    2025年12月1日

查看全文
  • A. Rymzhina,
  • Prachi Sharma,
  • V. Platonov,
  • V. Podlipnov,
  • V. Pavelyev,
  • Nishant Tripathi

摘要

Abstract

The paper presents a comparison study results on the heterostructure between TiS3 and Porous Silicon with pure Porous Silicon optoelectronic properties for photonics applications. To do this, titanium trisulfide, Porous Silicon and a heterostructure between them were synthesized and investigated. The TiS3/P–Si heterostructure-based photodetector demonstrated a significant performance enhancement over the pure P–Si device. Key results include an 8 to 10 fold increase in photoresponsivity (reaching up to ~190 A/W at 2 V bias, wavelength of 632.8 nm and 0.3 mW/cm2 light power density), quantum efficiency (exceeding 37%), and detectivity (up to 2.26 × 1010 Jones). Furthermore, the heterostructure exhibited a much faster response time of 0.015 s compared to 0.169 s for the pure P–Si device. The results demonstrate the relevance of using heterostructures for the development of new generation photodetectors.