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Abstract <p>The paper addresses the physics of operation of limiting diodes, the main factors that determine the parameters and characteristics of protective devices, and the prospects for their development in the millimeter-wave (mmWave) range. New solutions to problems associated with the development of switching and protective semiconductor microwave devices in the mmWave range are described. The achieved results in solving these problems are confirmed by the creation of new semiconductor devices manufactured in a single technological cycle based on monolithic multi-diode structures, as well as the development of electrodynamic structures of protective devices and switches using packaged diodes, which provide high stability when the product is exposed to mechanical and climatic factors. The designs of switches containing several distributed-type diodes, due to an increase in the effective switching area, have better range characteristics and increased electrical strength (over 10 kW). A new approach to creating packaged diodes containing lumped-type semiconductor structures is proposed, enabling the development of various communication devices with a speed of 5–10 ns across all sections of the waveguide path in the mmWave range.</p>

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Design Principles of Integrated Solid-State Protective and Switching Devices at mmWave Frequencies

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • Ye. G. Volkov,
  • N. F. Karushkin,
  • A. V. Popov,
  • V. P. Rukin

摘要

Abstract

The paper addresses the physics of operation of limiting diodes, the main factors that determine the parameters and characteristics of protective devices, and the prospects for their development in the millimeter-wave (mmWave) range. New solutions to problems associated with the development of switching and protective semiconductor microwave devices in the mmWave range are described. The achieved results in solving these problems are confirmed by the creation of new semiconductor devices manufactured in a single technological cycle based on monolithic multi-diode structures, as well as the development of electrodynamic structures of protective devices and switches using packaged diodes, which provide high stability when the product is exposed to mechanical and climatic factors. The designs of switches containing several distributed-type diodes, due to an increase in the effective switching area, have better range characteristics and increased electrical strength (over 10 kW). A new approach to creating packaged diodes containing lumped-type semiconductor structures is proposed, enabling the development of various communication devices with a speed of 5–10 ns across all sections of the waveguide path in the mmWave range.