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Abstract <p>This paper presents a Ti/HfO<InlineEquation ID="IEq3"> <EquationSource Format="TEX">\({}_{x}\)</EquationSource> <!--BPhysMGU2670020Kuchumov-m3--> </InlineEquation>/TiN structure capable of switching between both resistive and capacitive states. Based on impedance spectroscopy data, an equivalent electrical circuit is proposed. This circuit explains resistive switching by filament growth in the hafnium oxide layer and suggests the presence of a TiON layer in the HfO<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\({}_{x}\)</EquationSource> <!--BPhysMGU2670020Kuchumov-m4--> </InlineEquation>/TiN interfacial region, which may explain the presence of ferroelectric capacitance switching. The capacitive switching window amounts to 185 pF, corresponding to a 75% increase in capacitance, while the resistance during resistive switching increases tenfold. These features represent and example of a versatile structure that can function as both a capacitor and a multistate resistor. This enables encoding more information in a single cell and the creation of more complex logic elements. The problem of parasitic currents may also be solved, dramatically improving the energy efficiency and reliability of scalable memory arrays.</p>

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Ti/HfO\({}_{x}\)/TiN-Based Memcapacitor for Neuromorphic Applications

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • I. D. Kuchumov,
  • M. N. Martyshov,
  • A. S. Ilyin,
  • A. I. Novoseltsev,
  • T. P. Savchuk,
  • M. B. Grinberg,
  • P. A. Forsh,
  • P. K. Kashkarov

摘要

Abstract

This paper presents a Ti/HfO \({}_{x}\) /TiN structure capable of switching between both resistive and capacitive states. Based on impedance spectroscopy data, an equivalent electrical circuit is proposed. This circuit explains resistive switching by filament growth in the hafnium oxide layer and suggests the presence of a TiON layer in the HfO \({}_{x}\) /TiN interfacial region, which may explain the presence of ferroelectric capacitance switching. The capacitive switching window amounts to 185 pF, corresponding to a 75% increase in capacitance, while the resistance during resistive switching increases tenfold. These features represent and example of a versatile structure that can function as both a capacitor and a multistate resistor. This enables encoding more information in a single cell and the creation of more complex logic elements. The problem of parasitic currents may also be solved, dramatically improving the energy efficiency and reliability of scalable memory arrays.