Scholarlink

Abstract <p>In the present work, perovskite solar cell with Sn based absorber layer (CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>) have been modelled and validated with solar cell capacitance simulator. The structure of the absorber performed on FTO/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/Cu<sub>2</sub>O to analyse the efficiency of power conversion. Efficiency optimization of the proposed device model was carried out by variation in thickness, defect density, interface defect densities and doping concentrations of the absorber layer. It was evident that generation of charge carriers is directly proportional to the thickness of absorber layer up to certain extent and then varying nonlinearly. For optimal doping concentrations of 1 × 10<sup>19</sup> cm<sup>–3</sup> in both HTL and ETL layers, corresponding <i>V</i><sub><i>OC</i></sub>, <i>J</i><sub><i>SC</i></sub>, FF % and η are 0.8847 V, 30.52 mA/cm<sup>2</sup>, 78.95 and 21.32%, respectively. However, with doping concentrations of 1 × 10<sup>16</sup>&#xa0;cm<sup>–3</sup> and thickness ~600 nm in absorber layer, the power conversion efficiency (PCE) were raised to 30.06%. Proposed optimized device model is a found to be superior than that of similar device counterpart with <i>V</i><sub><i>OC</i></sub> ~ 1.05 V, <i>J</i><sub><i>SC</i></sub> ~ 33.35 mA/cm<sup>2</sup> and FF ~ 85.45%, respectively. Such device can be an alternative for making environmentally friendly solar cells with high efficiency. High conversion efficiency possibly attributed to the good absorption capability of the material, energy band alignment and suitable doping concentrations at ETL/HTL layer.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Performance Optimization of FTO/TiO2/CH3NH3SnI3/Cu2O Solar Cell: Role of CH3NH3SnI3 Perovskite Light Absorber

  • 期刊论文

  • 发表日期：

    2025年8月1日

查看全文
  • Basanta Bhowmik,
  • Ranjan Kumar Singh,
  • Aneema Mahato,
  • Prerona Sanyal

摘要

Abstract

In the present work, perovskite solar cell with Sn based absorber layer (CH3NH3SnI3) have been modelled and validated with solar cell capacitance simulator. The structure of the absorber performed on FTO/TiO2/CH3NH3SnI3/Cu2O to analyse the efficiency of power conversion. Efficiency optimization of the proposed device model was carried out by variation in thickness, defect density, interface defect densities and doping concentrations of the absorber layer. It was evident that generation of charge carriers is directly proportional to the thickness of absorber layer up to certain extent and then varying nonlinearly. For optimal doping concentrations of 1 × 1019 cm–3 in both HTL and ETL layers, corresponding VOC, JSC, FF % and η are 0.8847 V, 30.52 mA/cm2, 78.95 and 21.32%, respectively. However, with doping concentrations of 1 × 1016 cm–3 and thickness ~600 nm in absorber layer, the power conversion efficiency (PCE) were raised to 30.06%. Proposed optimized device model is a found to be superior than that of similar device counterpart with VOC ~ 1.05 V, JSC ~ 33.35 mA/cm2 and FF ~ 85.45%, respectively. Such device can be an alternative for making environmentally friendly solar cells with high efficiency. High conversion efficiency possibly attributed to the good absorption capability of the material, energy band alignment and suitable doping concentrations at ETL/HTL layer.