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<p>Two-dimensional (2D) ferroelectrics pair atomic-scale thickness with switchable polarization, but many promising chalcogenides and halides are severely air-sensitive. This review maps the mechanisms (displacive, interlayer sliding, electronic, dipolar, and topological) that govern in-plane and out-of-plane polarization, then examines how oxygen, moisture, and electrothermal stress drive oxidation, hydrolysis, blistering, and morphological failure that destabilize domains in the ultrathin limit. We compare synthesis and handling routes and also highlight encapsulation strategies and their impact on FeFETs, memristors, and vdW heterostructures. Our review shows the requirement for practical 2D ferroelectrics to develop standardized stability metrics, humidity/temperature-controlled testing, interfacial engineering, and scalable, atomically thin encapsulation compatible with wafer-level device integration.</p> Graphical abstract <p></p>

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Encapsulation and stability challenges in air-sensitive 2D ferroelectric materials

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月15日

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  • R. Qi,
  • A. W. Robertson

摘要

Two-dimensional (2D) ferroelectrics pair atomic-scale thickness with switchable polarization, but many promising chalcogenides and halides are severely air-sensitive. This review maps the mechanisms (displacive, interlayer sliding, electronic, dipolar, and topological) that govern in-plane and out-of-plane polarization, then examines how oxygen, moisture, and electrothermal stress drive oxidation, hydrolysis, blistering, and morphological failure that destabilize domains in the ultrathin limit. We compare synthesis and handling routes and also highlight encapsulation strategies and their impact on FeFETs, memristors, and vdW heterostructures. Our review shows the requirement for practical 2D ferroelectrics to develop standardized stability metrics, humidity/temperature-controlled testing, interfacial engineering, and scalable, atomically thin encapsulation compatible with wafer-level device integration.

Graphical abstract