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<p>Our antenna-coupled thermoelectric THz detectors use sputtered Sb<sub>2</sub>Te<sub>3</sub> films as one of the key materials. After sputtering at room temperature, films must be activated by annealing, which introduces Sb-O infrared vibrational bands for temperatures exceeding ~ 200&#xa0;°C. Far-infrared reflectance spectra and X-ray diffraction data suggest that the oxidation occurs mainly at the interface between film and glass substrate and does not affect the bulk of the film. Detector characterization data is presented for antenna-coupled Sb<sub>2</sub>Te<sub>3</sub>-Bi<sub>2</sub>Te<sub>3</sub> thermoelectric junction detectors.</p> Graphical abstract <p></p>

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Far-IR Sb-O vibrations in annealed sputtered films of Sb2Te3 for thermoelectric THz detector applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月1日

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  • Rumana Zahir,
  • Zakariya Mohayman,
  • F. Javier Gonzalez,
  • Keqi Qin,
  • Kalpathy Sundaram,
  • Masahiro Ishigami,
  • Robert E. Peale

摘要

Our antenna-coupled thermoelectric THz detectors use sputtered Sb2Te3 films as one of the key materials. After sputtering at room temperature, films must be activated by annealing, which introduces Sb-O infrared vibrational bands for temperatures exceeding ~ 200 °C. Far-infrared reflectance spectra and X-ray diffraction data suggest that the oxidation occurs mainly at the interface between film and glass substrate and does not affect the bulk of the film. Detector characterization data is presented for antenna-coupled Sb2Te3-Bi2Te3 thermoelectric junction detectors.

Graphical abstract