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<p>Within this study, alumina (Al<sub>2</sub>O<sub>3</sub>) thin films were deposited onto<i> p</i>-type (100) silicon substrates using two techniques: radio frequency (RF) magnetron sputtering and Plasma-Enhanced Atomic Layer Deposition (PEALD). Deposition conditions were optimized to investigate the influence of technique and post-deposition annealing on the structural, electrical, and dielectric properties of the film. Structural analysis confirmed the amorphous nature of the films up to 500&#xa0;°C. Multiple-angle ellipsometry revealed refractive indices ranging from 1.6 to 1.68 for PEALD and 1.72 to 1.88 for sputtered films across the 400–500&#xa0;°C annealing range. Electrical measurements showed leakage current densities between 10⁻<sup>8</sup> and 10⁻<sup>6</sup> A/cm<sup>2</sup>. Notably, a flatband voltage shift of + 2.9&#xa0;V was recorded for PEALD films, compared to + 0.2&#xa0;V for sputtered ones. Dielectric properties were evaluated by fabricating TiN/Al<sub>2</sub>O<sub>3</sub>/TiN capacitors, with dielectric constant and loss analyzed over varying frequencies and temperatures. Breakdown voltages were also extracted, enabling a comprehensive performance comparison between the two deposition techniques.</p> Graphical abstract <p></p>

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Tailoring crystallinity in Al2O3 dielectric films via PEALD and sputtering: Implications for thermal budget and device integration

  • 期刊论文

  • 发表日期：

    2026年4月20日

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  • Rajesh Kumar Jha

摘要

Within this study, alumina (Al2O3) thin films were deposited onto p-type (100) silicon substrates using two techniques: radio frequency (RF) magnetron sputtering and Plasma-Enhanced Atomic Layer Deposition (PEALD). Deposition conditions were optimized to investigate the influence of technique and post-deposition annealing on the structural, electrical, and dielectric properties of the film. Structural analysis confirmed the amorphous nature of the films up to 500 °C. Multiple-angle ellipsometry revealed refractive indices ranging from 1.6 to 1.68 for PEALD and 1.72 to 1.88 for sputtered films across the 400–500 °C annealing range. Electrical measurements showed leakage current densities between 10⁻8 and 10⁻6 A/cm2. Notably, a flatband voltage shift of + 2.9 V was recorded for PEALD films, compared to + 0.2 V for sputtered ones. Dielectric properties were evaluated by fabricating TiN/Al2O3/TiN capacitors, with dielectric constant and loss analyzed over varying frequencies and temperatures. Breakdown voltages were also extracted, enabling a comprehensive performance comparison between the two deposition techniques.

Graphical abstract