<p>Nanostructured semiconductor thin films are of great interest due to their tunable properties and applications in photocatalysis, optoelectronics, and sensing. In this study, Sn-doped ZnO thin films were synthesized via the SILAR method using tin concentrations of 1, 3, and 5% with two distinct precursors. Films were annealed at 400&#xa0;°C for 3&#xa0;h to improve crystallinity and adhesion. Structural, optical, and morphological properties were analyzed by XRD, UV–Vis spectroscopy, and SEM. XRD confirmed Sn incorporation through peak shifts and crystallite size variation, while UV–Vis revealed bandgap modulation with doping. SEM micrographs showed morphology strongly influenced by dopant concentration and precursor chemistry. Results demonstrate that SILAR is a simple and effective method to tune ZnO thin film properties for potential optoelectronic and sensing applications.</p> Graphical abstract <p></p>

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Effect of tin doping on the structural, optical, and morphological properties of ZnO thin films by SILAR method

  • José Higinio Mayorga-Estrada,
  • Víctor Hugo Martínez-Landeros,
  • Sergio García-Villarreal,
  • Jesús Alfonso Mercado-Silva,
  • Bertha Alicia Puente-Urbina,
  • Luis Alfonso García-Cerda,
  • Dagoberto Vázquez-Obregón

摘要

Nanostructured semiconductor thin films are of great interest due to their tunable properties and applications in photocatalysis, optoelectronics, and sensing. In this study, Sn-doped ZnO thin films were synthesized via the SILAR method using tin concentrations of 1, 3, and 5% with two distinct precursors. Films were annealed at 400 °C for 3 h to improve crystallinity and adhesion. Structural, optical, and morphological properties were analyzed by XRD, UV–Vis spectroscopy, and SEM. XRD confirmed Sn incorporation through peak shifts and crystallite size variation, while UV–Vis revealed bandgap modulation with doping. SEM micrographs showed morphology strongly influenced by dopant concentration and precursor chemistry. Results demonstrate that SILAR is a simple and effective method to tune ZnO thin film properties for potential optoelectronic and sensing applications.

Graphical abstract