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<p>Energetic metal contamination is a significant contributor to white pixel defects and high dark current in CIS devices (Teranishi in Sensors 18:2358, 2018). Multiply charged Fe, Ti, Cr, Cd, W, Mo, and V ions can have similar magnetic and electrostatic rigidity as high-energy implant species, such as As<sup>2+</sup>, As<sup>3+</sup>, and As<sup>4+</sup> and therefore are insufficiently removed by magnetic or electrostatic filtering. This paper discusses in detail the source of these impurities and steps taken to minimize the contamination as part of the development of the Axcelis’ ELS Low Metals ion source upgrade kit.</p> Graphical Abstract <p></p>

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Low metals ion source

  • 期刊论文

  • 发表日期：

    2025年3月17日

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  • Vladimir Romanov,
  • Paul Silverstein,
  • Wilhelm Platow,
  • Justin McCabe,
  • Olivia Campbell,
  • Kevin Wenzel,
  • Ronald Reece

摘要

Energetic metal contamination is a significant contributor to white pixel defects and high dark current in CIS devices (Teranishi in Sensors 18:2358, 2018). Multiply charged Fe, Ti, Cr, Cd, W, Mo, and V ions can have similar magnetic and electrostatic rigidity as high-energy implant species, such as As2+, As3+, and As4+ and therefore are insufficiently removed by magnetic or electrostatic filtering. This paper discusses in detail the source of these impurities and steps taken to minimize the contamination as part of the development of the Axcelis’ ELS Low Metals ion source upgrade kit.

Graphical Abstract