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<p>Ion implantation of boron species is a crucial doping process in silicon wafer manufacturing. Achieving high productivity in this process is always desirable, particularly for high-dose and low-energy implantation recipes. Boron Trifluoride (BF<sub>3</sub>) is typically used as the dopant source, however multiple investigations have been conducted previously using Diboron Tetrafluoride (B<sub>2</sub>F<sub>4</sub>) and BF<sub>3</sub>/H<sub>2</sub> mixtures to understand their performance relative to BF<sub>3</sub>. In this paper, we present test results for a B<sub>2</sub>F<sub>4</sub> and BF<sub>3</sub> gas mixture that is optimized to further enhance the ion implant tool productivity. The study was conducted on an AIBT iPulsar Plus high-current ion implantation tool. We examined different concentrations of the B<sub>2</sub>F<sub>4</sub> and BF<sub>3</sub> mixture to determine the improvement in B<sup>+</sup> and BF<sub>2</sub><sup>+</sup> beam currents at various energy levels. The results of the beam current performance and beam spectrum comparison are analyzed and discussed.</p> Graphical abstract <p></p>

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Improving beam current and performance in boron ion implantation via Boron Trifluoride (BF3) and Diboron Tetrafluoride (B2F4) mixture

  • 期刊论文

  • 发表日期：

    2025年2月26日

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  • Ying Tang,
  • Chee Weng Leong,
  • Ryan Yang,
  • Jowei Hung,
  • Paul Wang,
  • Jimmy Wu,
  • Joven Chao,
  • Joseph Despres,
  • Matt Marlow,
  • Joseph Sweeney

摘要

Ion implantation of boron species is a crucial doping process in silicon wafer manufacturing. Achieving high productivity in this process is always desirable, particularly for high-dose and low-energy implantation recipes. Boron Trifluoride (BF3) is typically used as the dopant source, however multiple investigations have been conducted previously using Diboron Tetrafluoride (B2F4) and BF3/H2 mixtures to understand their performance relative to BF3. In this paper, we present test results for a B2F4 and BF3 gas mixture that is optimized to further enhance the ion implant tool productivity. The study was conducted on an AIBT iPulsar Plus high-current ion implantation tool. We examined different concentrations of the B2F4 and BF3 mixture to determine the improvement in B+ and BF2+ beam currents at various energy levels. The results of the beam current performance and beam spectrum comparison are analyzed and discussed.

Graphical abstract