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<p>This paper presents a comprehensive overview of the evolution of thermal processing in semiconductor implant annealing, covering technologies such as rapid thermal processing (RTP), millisecond as well as nanosecond annealing, and recent advancements in microwave annealing. The historical perspective traces the development of RTP from early solar furnaces to the first implant anneal processes using more advanced systems. The study delves into soak and spike annealing, analyzing the impact of various process parameters such as ambient conditions, ramp-up, ramp-down rates, and peak width. In addition, the role of millisecond annealing is explored both as a stand-alone process and in combination with spike or soak annealing. Nanosecond Laser annealing, known for its high precision and localized heating capabilities, is also examined and compared.&#xa0;Furthermore, the paper presents recent results from microwave annealing, demonstrating its potential to achieve uniform dopant activation and low thermal budgets.</p> Graphical abstract <p><OrderedList> <ListItem> <ItemNumber>1.</ItemNumber> <ItemContent> <p><i>Historical perspective:</i><UnorderedList Mark="Bullet"> <ItemContent> <p>Early RTP development from solar furnaces to advanced systems.</p> </ItemContent> <ItemContent> <p>Evolution of RTP for implant annealing and ambient critical processes.</p> </ItemContent> </UnorderedList></p> </ItemContent> </ListItem> <ListItem> <ItemNumber>2.</ItemNumber> <ItemContent> <p><i>Technological advancements</i>:<UnorderedList Mark="Bullet"> <ItemContent> <p><i>Soak and spike annealing:</i> impact of process parameters like ambient conditions, ramp-up, ramp-down rates, and peak width.</p> </ItemContent> <ItemContent> <p>Evolution of RTP for implant annealing and ambient critical processes.</p> </ItemContent> <ItemContent> <p><i>Millisecond annealing:</i> benefits of short temperature flashes in reducing diffusion and enhancing dopant activation.</p> </ItemContent> <ItemContent> <p><i>Nanosecond laser annealing:</i> high precision and localized heating capabilities.</p> </ItemContent> <ItemContent> <p><i>Microwave annealing:</i> potential for uniform dopant activation and low thermal budgets.</p> </ItemContent> </UnorderedList></p> </ItemContent> </ListItem> <ListItem> <ItemNumber>3.</ItemNumber> <ItemContent> <p><i>Future outlook:</i><UnorderedList Mark="Bullet"> <ItemContent> <p>Continued evolution of thermal processing technologies.</p> </ItemContent> <ItemContent> <p>Potential integration of new techniques like nanosecond laser annealing and microwave annealing in semiconductor manufacturing.</p> </ItemContent> </UnorderedList></p> </ItemContent> </ListItem> </OrderedList></p>

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Thermal processing in semiconductor implant annealing: Historical and technological evolution

  • 期刊论文

  • 发表日期：

    2025年3月12日

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  • Silke Hamm,
  • Alexandr Cosceev,
  • Christian Pfahler,
  • Michael Storek,
  • Ikbal Varol,
  • Shreyashi Ganguly,
  • Kartik Shah,
  • Martin Albrecht,
  • Matthias Bauer

摘要

This paper presents a comprehensive overview of the evolution of thermal processing in semiconductor implant annealing, covering technologies such as rapid thermal processing (RTP), millisecond as well as nanosecond annealing, and recent advancements in microwave annealing. The historical perspective traces the development of RTP from early solar furnaces to the first implant anneal processes using more advanced systems. The study delves into soak and spike annealing, analyzing the impact of various process parameters such as ambient conditions, ramp-up, ramp-down rates, and peak width. In addition, the role of millisecond annealing is explored both as a stand-alone process and in combination with spike or soak annealing. Nanosecond Laser annealing, known for its high precision and localized heating capabilities, is also examined and compared. Furthermore, the paper presents recent results from microwave annealing, demonstrating its potential to achieve uniform dopant activation and low thermal budgets.

Graphical abstract

1.

Historical perspective:

Early RTP development from solar furnaces to advanced systems.

Evolution of RTP for implant annealing and ambient critical processes.

2.

Technological advancements:

Soak and spike annealing: impact of process parameters like ambient conditions, ramp-up, ramp-down rates, and peak width.

Evolution of RTP for implant annealing and ambient critical processes.

Millisecond annealing: benefits of short temperature flashes in reducing diffusion and enhancing dopant activation.

Nanosecond laser annealing: high precision and localized heating capabilities.

Microwave annealing: potential for uniform dopant activation and low thermal budgets.

3.

Future outlook:

Continued evolution of thermal processing technologies.

Potential integration of new techniques like nanosecond laser annealing and microwave annealing in semiconductor manufacturing.