Scholarlink

<p>Indium is a common dopant in CMOS semiconductor manufacturing which can be challenging to realize in general-purpose ion implanters owing to the lack of a viable gaseous form. To enable the process, various solid indium compounds have been utilized. Potential candidates for vaporization include Indium(I) iodide, Indium(III) iodide, and Indium(III) chloride (InCl<sub>3</sub>). The latter compound is often cited in work with Indium and is frequently used for production processing [A. Suvkhanov, M. Mirabedini, V. Hornbeck, S.F. Nitodas, C.E. Kalnas, C. Win Ye, Investigation of indium activation by SRP and SIMS for sub-0.1 um retrograde channels. 14th international conference on ion implantation technology proceedings (2002), pp. 29–32]. This work focuses on the application of Indium(I) iodide in a conventional E220/E500 vaporizer ion source. Benefits for selecting this material include an operational temperature easily accessible by the hardware, a simple conditioning protocol, a low fraction of unwanted species, stable ion source operation, and reduced build-up of residues in the ion source region of the tool. This report describes the above highlighted characteristics of using InI and subsequent non-indium operations on the same tool.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Production experience using indium(I) iodide as a source material for vaporization operation in a medium current implanter

  • 期刊论文

  • 发表日期：

    2025年2月24日

查看全文
  • Ronald C. Johnson,
  • Bao Tran Nguyen,
  • Jess Nelson,
  • Michael Caldwell

摘要

Indium is a common dopant in CMOS semiconductor manufacturing which can be challenging to realize in general-purpose ion implanters owing to the lack of a viable gaseous form. To enable the process, various solid indium compounds have been utilized. Potential candidates for vaporization include Indium(I) iodide, Indium(III) iodide, and Indium(III) chloride (InCl3). The latter compound is often cited in work with Indium and is frequently used for production processing [A. Suvkhanov, M. Mirabedini, V. Hornbeck, S.F. Nitodas, C.E. Kalnas, C. Win Ye, Investigation of indium activation by SRP and SIMS for sub-0.1 um retrograde channels. 14th international conference on ion implantation technology proceedings (2002), pp. 29–32]. This work focuses on the application of Indium(I) iodide in a conventional E220/E500 vaporizer ion source. Benefits for selecting this material include an operational temperature easily accessible by the hardware, a simple conditioning protocol, a low fraction of unwanted species, stable ion source operation, and reduced build-up of residues in the ion source region of the tool. This report describes the above highlighted characteristics of using InI and subsequent non-indium operations on the same tool.

Graphical abstract