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<p>In this study, the electron field emission properties of carbon nanotubes (CNTs) were enhanced by decorating them with indium (In) nanoparticles. The structural and morphological characteristics of pristine and In-decorated CNTs were analyzed using Fourier-transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and field emission scanning electron microscopy (FESEM). Field emission parameters such as turn-on field (E<sub>to</sub>), threshold field (E<sub>th</sub>), field enhancement factor (β), and maximum current density (J<sub>max</sub>) were thoroughly investigated. Results revealed that In decoration reduced the E<sub>to</sub> from 1.25&#xa0;V/μm to 1.0&#xa0;V/μm and decreased the E<sub>th</sub> from 1.4 to 1.36&#xa0;V/μm, indicating lower voltage requirements for electron emission. The field enhancement factor (β) significantly increased from 2730 to 5230, while the J<sub>max</sub> rise from 238.33 to 333.3 μA/cm<sup>2</sup>. These improvements demonstrate that In-decorated CNTs exhibit superior electron emission performance, making them promising for advanced electron emission applications.</p> Graphical abstract <p></p>

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Synthesis and characterization of In-decorated CNTs on GaN substrates for enhanced electron field emission

  • 期刊论文

  • 发表日期：

    2025年2月14日

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  • Mohd Sarvar,
  • Yasir Ud Din,
  • Shah Masheerul Aalam,
  • Javid Ali

摘要

In this study, the electron field emission properties of carbon nanotubes (CNTs) were enhanced by decorating them with indium (In) nanoparticles. The structural and morphological characteristics of pristine and In-decorated CNTs were analyzed using Fourier-transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and field emission scanning electron microscopy (FESEM). Field emission parameters such as turn-on field (Eto), threshold field (Eth), field enhancement factor (β), and maximum current density (Jmax) were thoroughly investigated. Results revealed that In decoration reduced the Eto from 1.25 V/μm to 1.0 V/μm and decreased the Eth from 1.4 to 1.36 V/μm, indicating lower voltage requirements for electron emission. The field enhancement factor (β) significantly increased from 2730 to 5230, while the Jmax rise from 238.33 to 333.3 μA/cm2. These improvements demonstrate that In-decorated CNTs exhibit superior electron emission performance, making them promising for advanced electron emission applications.

Graphical abstract