<p>When dose matching occurs between ion implanters with sheet resistances (<i>R</i>_s), the implant tilt/twist angle is typically set to 7°/22°, at which ions incident with an off-axis and a dopant profile become stable in the case of a (100) Si wafer. This is attributable to dose changes and ion angle deviations (IADs) influencing <i>R</i>_s, owing to the channeling phenomenon close to the implant angle tilt of 0°. With decrease in the effective dose of the wafer, corresponding to the cosine of the tilt angle in certain single-wafer-type implanters that facilitates relatively high-tilt-angle implantation, the dose matching should be verified at a high tilt angle.</p> Graphical abstract <p></p>