<p>The effect of arsenic contamination on BF₂ implantation was evaluated based on sheet resistance (Rs). BF₂ implant layers were individually formed at various energies on each of the arsenic contaminated wafers and the non-contaminated wafers. The dose was linearly controlled at standard ± 5%. Rs was then measured along the direction of dose modulation. The difference in Rs from no cross-contamination under the same BF₂ energy increased at lower energies. It is speculated that more carriers were compensated by arsenic because the BF₂ layer approached the arsenic layer. The tangential slope of the inversely proportional curve between carrier concentration and Rs should increase due to the compensation. This theory explains the reason that the difference in the slope from non-contaminated wafers increases with lower energy or greater difference in Rs. In conclusion, energetic dopant cross-contamination causes instability in the Rs quality control for shallow implant layers.</p> Graphical abstract <p></p>