<p>We have reported that mixture molecular ion-implanted region changes with the type of defects in the molecular ion-implanted region depending on the molecular ion ratio (CH⁺ ratio). In the case of Ni gettering, the gettered amount of Ni by segregation is proportional to the CH⁺ ratio. However, the effects of defect type on other metallic impurities have not been investigated. In this study, we investigated the Fe gettering behavior of the mixture molecular ion-implanted region. As a result, we found that the Fe gettering behavior is also affected by the CH⁺ ratio. In low CH⁺ ratio, the gettering amount is higher in low-temperature annealing. At a high CH⁺ ratio, gettering amount is higher in high-temperature annealing. These findings are useful for realizing the full use of the gettering capability of the mixture molecular ion-implanted region in highly sensitive CMOS image sensors.</p> Graphical abstract <p></p>