<p>We have developed an ion source which can generate high-current metal ion beams as well as those of standard dopant ion species. The beam current of Al⁺, Ti⁺, Ni⁺, and W⁺ is 35, 17, 25, and 14&#xa0;mA, respectively, at around 20&#xa0;keV. The ion implanter operates in the deceleration mode, leading to a high Al⁺ current of 24&#xa0;mA even at 1&#xa0;keV. The source has a crucible for heating solid raw metal material to enhance the reaction between the metal and halogen gas which is fed to the crucible chamber. The source generates approximately 300&#xa0;mm tall rectangular beams. We installed it to the ion beam equipment which has the magnet large enough to magnetically bend the tall beam for mass separation. We investigated the influence of high-dose W⁺ implantation on carbon films. They became more etch resistant against CF₄ plasma.</p> Graphical abstract <p></p>