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<p>A one-touch adaptor for thin and small-diameter SiC and GaN devices was developed. The adaptor can be used for ion implantation in 150 and 200 mm mass production lines, thereby eliminating the need for direct manual loading into the process chamber. The advantage of this adaptor is that the wafer can be automatically transported into the process chamber and implanted with ions. Wafer distortion owing to rising temperatures resulting from the ion-beam irradiation of the rotating disk is a risk for this newly developed adaptor. Thus, a system that can measure wafer temperatures in vacuum from the atmospheric side was developed. The wafer temperature observations are also discussed.</p> Graphical abstract <p>In this development, an adaptor was developed to enable ion implantation of small-diameter SiC and GaN in normally operated equipment (e.g., 200-mm wafers). Although this adaptor is a manual type, it is designed to fit the size of wafers in normal operation, so that the fixing spring can be opened and closed with a single touch of a finger, and small-diameter, thin wafers can be easily mounted. In addition, because many SiC and GaN wafers have thin thicknesses, the wafer temperature rises during implantation, causing warpage. A system that can observe the wafer temperature during implantation has also been developed, and the results of actual wafer temperature measurements will also be reported.</p>

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Development of automatic transfer adaptors for thin and small-diameter SiC and GaN wafers

  • 期刊论文

  • 发表日期：

    2025年3月5日

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  • Kazuya Yoshitake,
  • Hiroki Murooka,
  • Eiji Tamaki,
  • Hideo Shigematsu,
  • Shingo Nakano,
  • Tomoharu Ono,
  • Hideo Tsurumi

摘要

A one-touch adaptor for thin and small-diameter SiC and GaN devices was developed. The adaptor can be used for ion implantation in 150 and 200 mm mass production lines, thereby eliminating the need for direct manual loading into the process chamber. The advantage of this adaptor is that the wafer can be automatically transported into the process chamber and implanted with ions. Wafer distortion owing to rising temperatures resulting from the ion-beam irradiation of the rotating disk is a risk for this newly developed adaptor. Thus, a system that can measure wafer temperatures in vacuum from the atmospheric side was developed. The wafer temperature observations are also discussed.

Graphical abstract

In this development, an adaptor was developed to enable ion implantation of small-diameter SiC and GaN in normally operated equipment (e.g., 200-mm wafers). Although this adaptor is a manual type, it is designed to fit the size of wafers in normal operation, so that the fixing spring can be opened and closed with a single touch of a finger, and small-diameter, thin wafers can be easily mounted. In addition, because many SiC and GaN wafers have thin thicknesses, the wafer temperature rises during implantation, causing warpage. A system that can observe the wafer temperature during implantation has also been developed, and the results of actual wafer temperature measurements will also be reported.