Manufacture and study of a chemiresistive gas sensor using MoO3 as a sensitive film
摘要
A gas sensor was fabricated using a sensitive MoO3 film with the Si–SiO2/Cr–Au/MoO3 structure and CO (carbon monoxide) as the analyte gas. An interdigitated design for the electrodes was defined through photolithography, and the lift-off photolithography technique was employed to define the active area. Subsequently, a MoO3 film (120 nm) was deposited by sputtering in a reactive O2 atmosphere. Characterizations of the MoO3 films were conducted using XPS to confirm the formation of MoO3. UV–Vis spectroscopy and the Tauc method were utilized to calculate the band gap of 3.72 eV and 3.77 eV. SEM images of the MoO3 film surface revealed a uniform surface, and the four-point probe test showed a resistivity of 8.93 × 103 Ωcm. Finally, a static CO sensing test resulted in a sensitivity of 25% and 59% for 500 ppm of CO for unannealed and annealed devices, respectively.
Graphical abstract