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<p>Through-Silicon Vias (TSVs) are vital for vertical interconnects in 3D integrated circuits (3DICs), but their reliability degrades under high temperatures and frequencies. Conventional metallic TSVs, such as copper and aluminum, suffer from increased resistive losses. This study introduces a temperature-dependent model for Multiwall Carbon Nanotube (MW-CNT) TSVs, incorporating thermal activation of conducting channels and reduced silicon substrate conductivity. Simulations from 300 to 400&#xa0;K show improved signal transmission with rising temperature. Compared to Cu and Al TSVs, MW-CNT structures exhibit lower insertion loss and superior thermal stability, making them promising candidates for high-performance, thermally resilient 3DIC applications.</p> Graphical abstract <p>A unified temperature‑dependent wideband model shows that MWCNT TSVs, via thermal channel activation and substrate parasitic coupling, achieve improved |S<sub>21</sub>| and stability, outperforming Cu/Al for 3DICs.</p> <p></p>

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Temperature dependent analysis of multiwall carbon nanotubes TSVs in 3D integrated circuits

  • 期刊论文

  • 发表日期：

    2026年1月27日

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  • Chun-Wei Yao,
  • Ming-Han Liao,
  • Jiang Zhou,
  • Xuejun Fan,
  • Stephen Jones

摘要

Through-Silicon Vias (TSVs) are vital for vertical interconnects in 3D integrated circuits (3DICs), but their reliability degrades under high temperatures and frequencies. Conventional metallic TSVs, such as copper and aluminum, suffer from increased resistive losses. This study introduces a temperature-dependent model for Multiwall Carbon Nanotube (MW-CNT) TSVs, incorporating thermal activation of conducting channels and reduced silicon substrate conductivity. Simulations from 300 to 400 K show improved signal transmission with rising temperature. Compared to Cu and Al TSVs, MW-CNT structures exhibit lower insertion loss and superior thermal stability, making them promising candidates for high-performance, thermally resilient 3DIC applications.

Graphical abstract

A unified temperature‑dependent wideband model shows that MWCNT TSVs, via thermal channel activation and substrate parasitic coupling, achieve improved |S21| and stability, outperforming Cu/Al for 3DICs.