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<p>Ternary substitutions of Ca<sup>2+</sup>, Sn<sup>4+</sup>, and Ti<sup>4+</sup> (20%) into Ba(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (BZN) ceramics were studied for structural, dielectric, and electrical properties. Compositions prepared via solid-state reaction, showed single-phase cubic (Pm3̅m) structures, with lattice expansion for Ca<sup>2+</sup> and contraction for Sn<sup>4+</sup>/Ti<sup>4+</sup>. SEM revealed grain refinement most pronounced, in Ti<sup>4+</sup> doped BZN (BZTN, 3.28&#xa0;µm). BZTN exhibited the highest dielectric constant (~ 34,000), diffuse transition near 230℃, and loss tangent of 10.75 (1&#xa0;kHz). BZTN also gave the maximum current (2.06 × 10<sup>–2</sup> A at 5&#xa0;V, 500℃), while Sn<sup>4+</sup>-doped BZN showed highest conductivity and lowest resistance, confirming enhanced defect-mediated charge transport.</p> Graphical abstract <p></p>

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Effects of Ca2+, Sn4+, and Ti4+ doping on the structural, dielectric, and electrical properties of Ba(Zn1/3Nb2/3)O3 ceramics

  • 期刊论文

  • 发表日期：

    2025年10月30日

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  • Haroon Ur Rashid,
  • Sarir Uddin,
  • Khalil A. Ziq,
  • Firoz Khan,
  • Bakhtiar Ul Haq,
  • Khan Alam

摘要

Ternary substitutions of Ca2+, Sn4+, and Ti4+ (20%) into Ba(Zn1/3Nb2/3)O3 (BZN) ceramics were studied for structural, dielectric, and electrical properties. Compositions prepared via solid-state reaction, showed single-phase cubic (Pm3̅m) structures, with lattice expansion for Ca2+ and contraction for Sn4+/Ti4+. SEM revealed grain refinement most pronounced, in Ti4+ doped BZN (BZTN, 3.28 µm). BZTN exhibited the highest dielectric constant (~ 34,000), diffuse transition near 230℃, and loss tangent of 10.75 (1 kHz). BZTN also gave the maximum current (2.06 × 10–2 A at 5 V, 500℃), while Sn4+-doped BZN showed highest conductivity and lowest resistance, confirming enhanced defect-mediated charge transport.

Graphical abstract