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<p>SnS<sub>2</sub> exhibits interesting optoelectronic properties, enabling its application as electron transport layer (ETL) in perovskite solar cell. This work used FTO substrate as the sole source of Sn<sup>2+</sup> ions, followed by sulfurization to develop SnS<sub>2</sub> thin films on the substrate by cathodic electrodeposition. XRD confirmed SnS<sub>2</sub> films (hexagonal structure) with 19&#xa0;nm crystal size, and a preferential orientation in the (001) plane. UV–Vis spectra revealed a direct band gap of 2.06&#xa0;eV. AFM showed that formed clusters on the FTO surface due to sulfurization. Photoresponse measurements demonstrated efficient charge carrier generation and suppressed recombination, which is as favorable as ETL.</p> Graphical abstract <p></p>

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In situ formation of SnS2 in FTO by electrodeposition for applications in the electron transport layer of perovskite solar cells

  • 期刊论文

  • 发表日期：

    2025年9月22日

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  • J. C. Solis-Cortazar,
  • L. Rojas Blanco,
  • T. G. Sánchez,
  • M. Arellano-Cortaza,
  • M. F. García-Mendoza,
  • I. Zamudio Torres,
  • E. Ramírez Morales

摘要

SnS2 exhibits interesting optoelectronic properties, enabling its application as electron transport layer (ETL) in perovskite solar cell. This work used FTO substrate as the sole source of Sn2+ ions, followed by sulfurization to develop SnS2 thin films on the substrate by cathodic electrodeposition. XRD confirmed SnS2 films (hexagonal structure) with 19 nm crystal size, and a preferential orientation in the (001) plane. UV–Vis spectra revealed a direct band gap of 2.06 eV. AFM showed that formed clusters on the FTO surface due to sulfurization. Photoresponse measurements demonstrated efficient charge carrier generation and suppressed recombination, which is as favorable as ETL.

Graphical abstract