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<p>Fe-doped semi-insulating β-Ga<sub>2</sub>O<sub>3</sub> is a promising platform for development of advanced x-ray detectors. Optimizing their performance requires good understanding of the metal/Ga<sub>2</sub>O<sub>3</sub> interfacial and electronic properties between metal and Fe-doped β-Ga<sub>2</sub>O<sub>3</sub>. This study explores SiH<sub>4</sub> plasma effects on chemical stoichiometry, oxygen vacancy concentration and band bending for Ti thin films on Fe-doped β-Ga<sub>2</sub>O<sub>3</sub> with x-ray photoelectron spectroscopy. The plasma treatment leads to enhanced surface oxygen vacancies, accompanied by an elevated surface Fermi level and the formation of an interfacial layer structure different from the case without plasma processing. The SiH<sub>4</sub> plasma effects are discussed in relation to surface defect modifications.</p> Graphical abstract <p></p>

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SiH4 plasma-induced interfacial modifications between Ti and Fe-doped β-Ga2O3 for development of new-generation x-ray detectors

  • 期刊论文

  • 发表日期：

    2025年8月11日

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  • Sahyadri Anil Patil,
  • Mengbing Huang

摘要

Fe-doped semi-insulating β-Ga2O3 is a promising platform for development of advanced x-ray detectors. Optimizing their performance requires good understanding of the metal/Ga2O3 interfacial and electronic properties between metal and Fe-doped β-Ga2O3. This study explores SiH4 plasma effects on chemical stoichiometry, oxygen vacancy concentration and band bending for Ti thin films on Fe-doped β-Ga2O3 with x-ray photoelectron spectroscopy. The plasma treatment leads to enhanced surface oxygen vacancies, accompanied by an elevated surface Fermi level and the formation of an interfacial layer structure different from the case without plasma processing. The SiH4 plasma effects are discussed in relation to surface defect modifications.

Graphical abstract