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<p>This manuscript&#xa0;analyzes an optimized electrostatic-doped SiGe/Si heterostructure nanotube tunnel field-effect transistor (TFET), emphasizing analog and linearity performance measures. A relative material study of InGaAs/InP and InAs/Si heterostructures is performed by assessing critical characteristics such as drain current, cutoff frequency, transconductance, HD2, HD3, IMD2, IIP3, VIP2, and VIP3. The SiGe/Si-based TFET exhibits an impressive ON current of 3 × 10⁻<sup>5</sup> A/µm and an exceptionally diminished OFF current of 1.53 × 10⁻<sup>1</sup>⁸ A/µm, resulting in an outstanding I<sub>ON</sub>/I<sub>OFF</sub> ratio. The research&#xa0;presents a novel analog-linear efficiency assessment approach for the suggested nanoelectronics device, possessing a potential impact of demonstrating comparable capabilities <i>via</i> material-based evaluation. </p> Graphical abstract <p></p>

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Optimizing the performance of electrostatic-doped SiGe/Si heterostructure nanotube TFET by material analysis evaluating analog and linear parameters

  • 期刊论文

  • 发表日期：

    2025年7月8日

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  • Soumya Sen,
  • Mamta Khosla,
  • Ashish Raman

摘要

This manuscript analyzes an optimized electrostatic-doped SiGe/Si heterostructure nanotube tunnel field-effect transistor (TFET), emphasizing analog and linearity performance measures. A relative material study of InGaAs/InP and InAs/Si heterostructures is performed by assessing critical characteristics such as drain current, cutoff frequency, transconductance, HD2, HD3, IMD2, IIP3, VIP2, and VIP3. The SiGe/Si-based TFET exhibits an impressive ON current of 3 × 10⁻5 A/µm and an exceptionally diminished OFF current of 1.53 × 10⁻1⁸ A/µm, resulting in an outstanding ION/IOFF ratio. The research presents a novel analog-linear efficiency assessment approach for the suggested nanoelectronics device, possessing a potential impact of demonstrating comparable capabilities via material-based evaluation.

Graphical abstract