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<p>Lead zirconate titanate (PZT) thin films are key materials for MEMS devices. However, simultaneously achieving high breakdown strength and large polarization remains challenging. Herein, PbZr<sub>0.20</sub>Ti<sub>0.80</sub>O<sub>3</sub> (PZ<sub>0.20</sub>T<sub>0.80</sub>) thin films with high breakdown strength and PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (PZ<sub>0.52</sub>T<sub>0.48</sub>) thin films with high polarization are integrated to construct a PZ<sub>0.20</sub>T<sub>0.80</sub>–PZ<sub>0.52</sub>T<sub>0.48</sub> multilayer structure to address this challenge. The bottom layer guides the growth of the top layer, while the multilayer architecture redistributes the applied electric field. Furthermore, a one-step annealing strategy is employed to promote interlayer diffusion, forming a transition layer that alleviates interlayer stress arising from thermal mismatch and reduces defects induced by lattice mismatch. As a result, the multilayer film exhibits a high (001) orientation index of 91.83%, together with a synergistic enhancement of breakdown strength (800&#xa0;kV·cm<sup>−1</sup>) and remanent polarization (43.9 μC·cm<sup>−2</sup>). Thermo‑mechanical coupled finite element simulations further reveal the stress distribution, providing theoretical insight into the performance enhancement mechanism.</p> Graphical abstract <p></p>

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Enhanced ferroelectric performance of PZT multilayer films by one-step annealing process

  • 期刊论文

  • 发表日期：

    2026年6月19日

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  • Xiang Li,
  • Chang Hu,
  • Lin Zhou,
  • Jinrui Liu,
  • Shiyang Liu,
  • Danling Liu,
  • Yanlai Liu,
  • Jun Ma,
  • Jinian Hao,
  • Shenglin Jiang,
  • Guangzu Zhang,
  • Kanghua Li

摘要

Lead zirconate titanate (PZT) thin films are key materials for MEMS devices. However, simultaneously achieving high breakdown strength and large polarization remains challenging. Herein, PbZr0.20Ti0.80O3 (PZ0.20T0.80) thin films with high breakdown strength and PbZr0.52Ti0.48O3 (PZ0.52T0.48) thin films with high polarization are integrated to construct a PZ0.20T0.80–PZ0.52T0.48 multilayer structure to address this challenge. The bottom layer guides the growth of the top layer, while the multilayer architecture redistributes the applied electric field. Furthermore, a one-step annealing strategy is employed to promote interlayer diffusion, forming a transition layer that alleviates interlayer stress arising from thermal mismatch and reduces defects induced by lattice mismatch. As a result, the multilayer film exhibits a high (001) orientation index of 91.83%, together with a synergistic enhancement of breakdown strength (800 kV·cm−1) and remanent polarization (43.9 μC·cm−2). Thermo‑mechanical coupled finite element simulations further reveal the stress distribution, providing theoretical insight into the performance enhancement mechanism.

Graphical abstract