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<p>Two-dimensional transition metal dichalcogenide (TMDC) materials such as WSe<sub>2</sub> and MoS<sub>2</sub> are promising channel materials for field-effect transistor (FET) biosensors due to their atomic thickness, strong electrostatic control, and high surface sensitivity. In this work, a device-level analysis of a double-gated TMDC-based FET biosensor with hetero-dielectric gate engineering is presented. The proposed structure employs WSe<sub>2</sub> and MoS<sub>2</sub> as channel materials and Hf O<sub>2</sub> as the primary gate dielectric, while additional dielectric layers with different dielectric constants are introduced in the sensing region to create a hetero-dielectric configuration. Numerical simulations are performed to analyze dielectric modulation representing different biomolecular environments. The effect of dielectric constant variation on drain current, threshold voltage, and <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio is investigated. Results show that increasing the dielectric constant enhances gate capacitance and electrostatic control, improving current modulation and sensing performance. Comparative analysis indicates that hetero-dielectric double-gated structures enhance device sensitivity for low-power nanoscale biosensor applications.</p> Graphical abstract <p></p>

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Device-level analysis of double-gated WSe2/MoS2 TMDC FET biosensors with hetero-dielectric engineering for low-power sensing applications

  • 期刊论文

  • 发表日期：

    2026年4月27日

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  • Vydha Pradeep Kumar,
  • Deepak Kumar Panda,
  • K. Bhaskar Rao

摘要

Two-dimensional transition metal dichalcogenide (TMDC) materials such as WSe2 and MoS2 are promising channel materials for field-effect transistor (FET) biosensors due to their atomic thickness, strong electrostatic control, and high surface sensitivity. In this work, a device-level analysis of a double-gated TMDC-based FET biosensor with hetero-dielectric gate engineering is presented. The proposed structure employs WSe2 and MoS2 as channel materials and Hf O2 as the primary gate dielectric, while additional dielectric layers with different dielectric constants are introduced in the sensing region to create a hetero-dielectric configuration. Numerical simulations are performed to analyze dielectric modulation representing different biomolecular environments. The effect of dielectric constant variation on drain current, threshold voltage, and ION/IOFF ratio is investigated. Results show that increasing the dielectric constant enhances gate capacitance and electrostatic control, improving current modulation and sensing performance. Comparative analysis indicates that hetero-dielectric double-gated structures enhance device sensitivity for low-power nanoscale biosensor applications.

Graphical abstract