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<p>Chalcogenide perovskites such as BaZrS<sub>3</sub> are promising candidates for next generation optoelectronics such as photodetectors and solar cells. Compared to widely studied polycrystalline thin films, single crystals of BaZrS<sub>3</sub> with minimal extended and point defects, are ideal platform to study the material’s intrinsic transport properties and to make first-generation optoelectronic devices. However, the surface dielectrics formed on BaZrS<sub>3</sub> single crystals due to sulfation or oxidation have led to significant challenges to achieving high-quality electrical contacts, and hence, realizing the high-performance optoelectronic devices. Here, we report the development of electrical contact fabrication processes on BaZrS<sub>3</sub> single crystals, where various processes were employed to address the surface dielectric issue. Moreover, with optimized electrical contacts fabricated through dry etching, high-performance BaZrS<sub>3</sub> photoconductive devices with a low dark current of 0.1 nA at 10&#xa0;V bias and a fast transient photoresponse with rise and decay time of &lt; 0.2&#xa0;s were demonstrated.</p> Graphical abstract <p></p>

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Electrical contacts for high-performance optoelectronic devices of BaZrS3 single crystals

  • 期刊论文

  • 发表日期：

    2025年6月2日

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  • Huandong Chen,
  • Shantanu Singh,
  • Mythili Surendran,
  • Boyang Zhao,
  • Yan-Ting Wang,
  • Jayakanth Ravichandran

摘要

Chalcogenide perovskites such as BaZrS3 are promising candidates for next generation optoelectronics such as photodetectors and solar cells. Compared to widely studied polycrystalline thin films, single crystals of BaZrS3 with minimal extended and point defects, are ideal platform to study the material’s intrinsic transport properties and to make first-generation optoelectronic devices. However, the surface dielectrics formed on BaZrS3 single crystals due to sulfation or oxidation have led to significant challenges to achieving high-quality electrical contacts, and hence, realizing the high-performance optoelectronic devices. Here, we report the development of electrical contact fabrication processes on BaZrS3 single crystals, where various processes were employed to address the surface dielectric issue. Moreover, with optimized electrical contacts fabricated through dry etching, high-performance BaZrS3 photoconductive devices with a low dark current of 0.1 nA at 10 V bias and a fast transient photoresponse with rise and decay time of < 0.2 s were demonstrated.

Graphical abstract