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<p>In the semiconductor industry, transistor scaling has been accelerated, and resistive-capacitive (RC) delay has increased in the multilayer interconnects. To reduce the RC delay, low dielectric constant (low-<i>k</i>) films have been used as interlayer dielectrics (ILDs), and new precursors have been explored continuously for the low-<i>k</i> films. In this study, tris(trimethylsiloxy)silane (TMSS) was first introduced as a new precursor for the low-<i>k</i> film deposition in a plasma-enhanced chemical vapor deposition (PECVD) system. The low-<i>k</i> film deposited at 20 W showed the lowest <i>k</i> value of 2.70, which was mainly explained by the increased M-group (O-Si-C<sub>3</sub>) in chemical properties. The low-<i>k</i> film deposited at 20 W exhibited a hardness of 1.503 GPa, elastic modulus of 10.79 GPa, and leakage current density of 7.40 <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43578_2025_1558_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="19" /> </InlineMediaObject> <EquationSource Format="TEX">\(\times \)</EquationSource> <EquationSource Format="MATHML"><math> <mo>×</mo> </math></EquationSource> </InlineEquation> 10<sup>–8</sup> A/cm<sup>2</sup> at 1 MV/cm, which were suitable for the ILD applications. The TMSS precursor was first suggested as a new precursor to fabricate the low-<i>k</i> films.</p> Graphical Abstract <p>Low-<i>k</i> thin film fabricated by plasma-enhanced chemical vapor deposition of tris(trimethylsiloxy)silane precursor for ILD applications.</p>

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Introducing tris(trimethylsiloxy)silane as a new precursor for low-k thin films in plasma-enhanced chemical vapor deposition system

  • 期刊论文

  • 发表日期：

    2025年3月12日

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  • Chanyong Seo,
  • Jeongbeom Choi,
  • Kyubeom Bae,
  • Jaeyeon Kim,
  • Namwuk Baek,
  • Seonhee Jang,
  • Donggeun Jung

摘要

In the semiconductor industry, transistor scaling has been accelerated, and resistive-capacitive (RC) delay has increased in the multilayer interconnects. To reduce the RC delay, low dielectric constant (low-k) films have been used as interlayer dielectrics (ILDs), and new precursors have been explored continuously for the low-k films. In this study, tris(trimethylsiloxy)silane (TMSS) was first introduced as a new precursor for the low-k film deposition in a plasma-enhanced chemical vapor deposition (PECVD) system. The low-k film deposited at 20 W showed the lowest k value of 2.70, which was mainly explained by the increased M-group (O-Si-C3) in chemical properties. The low-k film deposited at 20 W exhibited a hardness of 1.503 GPa, elastic modulus of 10.79 GPa, and leakage current density of 7.40 \(\times \) × 10–8 A/cm2 at 1 MV/cm, which were suitable for the ILD applications. The TMSS precursor was first suggested as a new precursor to fabricate the low-k films.

Graphical Abstract

Low-k thin film fabricated by plasma-enhanced chemical vapor deposition of tris(trimethylsiloxy)silane precursor for ILD applications.