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Abstract <p>Solid-state color centers have demonstrated significant properties for use in applications such as sensing, quantum networking, and quantum interconnects. However, realistic implementation of color centers as a quantum technology requires precise routing and detection of emitted photons. Thus, integration of defect centers with a photonic platform is paramount for their ultimate success. SiC is a unique wide bandgap material capable of simultaneously hosting color centers with world-record coherence times (~5&#xa0;s) while exhibiting many favorable physical properties for an effective photonic platform. We review some of the progress made in recent years toward integrating color centers into quantum photonic devices in SiC, and discuss prospects and challenges of this material for future quantum technologies.</p> Graphical abstract <p></p>

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SiC photonics with integrated color centers: Challenges and prospects

  • 期刊论文

  • 发表日期：

    2026年3月24日

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  • Shanying Cui,
  • Jason Lipton,
  • Biqin Huang

摘要

Abstract

Solid-state color centers have demonstrated significant properties for use in applications such as sensing, quantum networking, and quantum interconnects. However, realistic implementation of color centers as a quantum technology requires precise routing and detection of emitted photons. Thus, integration of defect centers with a photonic platform is paramount for their ultimate success. SiC is a unique wide bandgap material capable of simultaneously hosting color centers with world-record coherence times (~5 s) while exhibiting many favorable physical properties for an effective photonic platform. We review some of the progress made in recent years toward integrating color centers into quantum photonic devices in SiC, and discuss prospects and challenges of this material for future quantum technologies.

Graphical abstract