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<p>The&#xa0;HfO<sub>2</sub>-based ferroelectric field-effect transistor is one of the promising candidates for emerging memory, owning to its numerous advantages, such as low operation voltage, high operation speed, and complementary metal oxides semiconductor compatibility. However, these devices exhibit complex characteristics due to the interplay of various phenomena, including those related to ferroelectricity and unintended charge trapping/de-trapping. Therefore, a precise understanding of these phenomena is essential for optimizing device performance. This article reviews key insights into the fundamental operation and reliability based on the latest research findings, as well as providing guidelines for improvement. Potential solutions for enhancing reliability from a material perspective are also described.</p> Graphical abstract <p></p>

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Reliability of HfO2-based FeFET memory

  • 期刊论文

  • 发表日期：

    2025年9月16日

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  • Reika Ichihara,
  • Milan D. Pešić,
  • Yusuke Higashi,
  • Min Hyuk Park

摘要

The HfO2-based ferroelectric field-effect transistor is one of the promising candidates for emerging memory, owning to its numerous advantages, such as low operation voltage, high operation speed, and complementary metal oxides semiconductor compatibility. However, these devices exhibit complex characteristics due to the interplay of various phenomena, including those related to ferroelectricity and unintended charge trapping/de-trapping. Therefore, a precise understanding of these phenomena is essential for optimizing device performance. This article reviews key insights into the fundamental operation and reliability based on the latest research findings, as well as providing guidelines for improvement. Potential solutions for enhancing reliability from a material perspective are also described.

Graphical abstract